FDMD86100
onsemi美国

FDMD86100

在产FET,MOSFET 阵列

MOSFET 2N-CH 100V 10A 8PWR 5X6

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C10A
Drain to Source Voltage (Vdss)100V
Power - Max2.2W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerWDFN
Supplier Device Package8-Power 5x6
其他
Base Product NumberFDMD86
Configuration2 N-Channel (Dual) Common Source
FET Feature-
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2060pF @ 50V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs10.5mOhm @ 10A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA

器件图片

技术资料