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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C3.2A, 2.5A
Drain to Source Voltage (Vdss)20V
Power - Max800mW
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case6-WFDFN Exposed Pad
Supplier Device PackageSC-75, MicroFET
Other
Base Product NumberFDMJ1032
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds270pF @ 10V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs90mOhm @ 3.2A, 4.5V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

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