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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage80 V
Continuous drain current14 ~ 84 A
On-resistance6.7 mΩMax · 21A
Gate threshold voltage2.5 VMax · 120μA
Power
Current - Continuous Drain (Id) @ 25°C14A (Ta), 84A (Tc)
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.5W (Ta), 92.6W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerTDFN
Supplier Device Package8-PQFN (5x6)
Other
Base Product NumberFDMS007
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3100 pF @ 40 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs6.7mOhm @ 21A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 120µA

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