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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage25 V
Continuous drain current39 ~ 49 A
On-resistance1.45 mΩMax · 30A
Gate threshold voltage3 VMax · 1mA
Power
Current - Continuous Drain (Id) @ 25°C39A (Ta), 49A (Tc)
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)3.3W (Ta), 89W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / Case8-PowerTDFN
Supplier Device Package8-PQFN (5x6)
Other
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5945 pF @ 13 V
MfrFairchild Semiconductor
Product StatusObsolete
Rds On (Max) @ Id, Vgs1.45mOhm @ 30A, 10V
SeriesDual Cool™, PowerTrench®, SyncFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 1mA

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