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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage150 V
Continuous drain current4.5 ~ 27 A
On-resistance47 mΩMax · 4.5A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C4.5A (Ta), 27A (Tc)
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Power Dissipation (Max)2.5W (Ta), 78W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerWDFN
Supplier Device Package8-MLP (5x6), Power56
Other
Base Product NumberFDMS25
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2610 pF @ 75 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs47mOhm @ 4.5A, 10V
SeriesUltraFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

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