onsemiUnited States
POWER FIELD-EFFECT TRANSISTOR, 2
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current29 A
On-resistance2.6 mΩMax · 28A
Gate threshold voltage3 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 3.3W (Ta), 78W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | Dual Cool™56 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4520 pF @ 15 V |
| Mfr | onsemi |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 28A, 10V |
| Series | Dual Cool™, PowerTrench®, SyncFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |