Fairchild SemiconductorUnited States
MOSFET 2N-CH 25V 16A/18A 8PQFN
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16A, 18A |
| Drain to Source Voltage (Vdss) | 25V |
| Power - Max | 1W |
| Environment and package | |
| Mounting Type | Surface Mount |
| Package | Bulk |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-PQFN (5x6) |
| Other | |
| Base Product Number | FDMS3616 |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1765pF @ 13V |
| Mfr | Fairchild Semiconductor |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 16A, 10V |
| Series | PowerTrench® |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
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