onsemi美国

FDMS3660AS

停产FET,MOSFET 阵列

MOSFET 2N-CH 30V 13A/30A POWER56

全部替代型号

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C13A, 30A
Drain to Source Voltage (Vdss)30V
Power - Max1W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device PackagePower56
其他
Base Product NumberFDMS3660
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2230pF @ 15V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs8mOhm @ 13A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.7V @ 250µA

技术资料