onsemiUnited States
MOSFET 2N-CH 30V 30A/60A POWER56
All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 30A, 60A |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 1W |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | Power56 |
| Other | |
| Base Product Number | FDMS3660 |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1765pF @ 15V |
| Mfr | onsemi |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 13A, 10V |
| Series | PowerTrench® |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |