FDMS3662
onsemi美国

FDMS3662

在产单 FET,MOSFET

MOSFET N-CH 100V 8.9A/49A 8PQFN

沟道N 沟道
耐压100 V
连续漏极电流8.9 ~ 49 A
导通电阻14.8 mΩ

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技术参数

沟道N 沟道
耐压100 V
连续漏极电流8.9 ~ 49 A
导通电阻14.8 mΩ最大 · 8.9A
阈值电压4.5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C8.9A (Ta), 49A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)2.5W (Ta), 104W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerTDFN
Supplier Device Package8-PQFN (5x6)
其他
Base Product NumberFDMS36
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4620 pF @ 50 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs14.8mOhm @ 8.9A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

器件图片

技术资料