onsemiUnited States
MOSFET N-CH 120V 18.5A/114A 8QFN
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage120 V
Continuous drain current18.5 ~ 114 A
On-resistance4 mΩMax · 67A
Gate threshold voltage4 VMax · 370A
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18.5A (Ta), 114A (Tc) |
| Drain to Source Voltage (Vdss) | 120 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Power Dissipation (Max) | 2.7W (Ta), 106W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-PQFN (5x6) |
| Other | |
| Base Product Number | FDMS4 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6460 pF @ 60 V |
| Mfr | onsemi |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 67A, 10V |
| Series | PowerTrench® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 370A |