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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage25 V
Continuous drain current28 ~ 60 A
On-resistance2.8 mΩMax · 28A
Gate threshold voltage2.2 VMax · 1mA
Power
Current - Continuous Drain (Id) @ 25°C28A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)3.3W (Ta), 59W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device Package8-PQFN (5x6)
Other
Base Product NumberFDMS85
FET FeatureSchottky Diode (Body)
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2825 pF @ 13 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs2.8mOhm @ 28A, 10V
SeriesPowerTrench®, SyncFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id2.2V @ 1mA

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