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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage100 V
Continuous drain current14.5 ~ 60 A
On-resistance7.5 mΩMax · 14.5A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C14.5A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Power Dissipation (Max)3.2W (Ta), 125W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerTDFN
Supplier Device Package8-PQFN (5x6)
Other
Base Product NumberFDMS86101
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3135 pF @ 50 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs7.5mOhm @ 14.5A, 10V
SeriesDual Cool™, PowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

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