FDMS86202ET120
onsemi美国

FDMS86202ET120

在产单 FET,MOSFET

MOSFET N-CH 120V 13.5/102A PWR56

沟道N 沟道
耐压120 V
连续漏极电流13.5 ~ 102 A
导通电阻7.2 mΩ

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技术参数

沟道N 沟道
耐压120 V
连续漏极电流13.5 ~ 102 A
导通电阻7.2 mΩ最大 · 13.5A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C13.5A (Ta), 102A (Tc)
Drain to Source Voltage (Vdss)120 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Power Dissipation (Max)3.3W (Ta), 187W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerTDFN
Supplier Device Package8-PQFN (5x6)
其他
Base Product NumberFDMS86202
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4585 pF @ 60 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs7.2mOhm @ 13.5A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

器件图片

技术资料