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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current23 ~ 42 A
On-resistance3 mΩMax · 23A
Gate threshold voltage3 VMax · 1mA
Power
Current - Continuous Drain (Id) @ 25°C23A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.5W (Ta), 78W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / Case8-PowerTDFN
Supplier Device Package8-PQFN (5x6)
Other
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3615 pF @ 15 V
MfrFairchild Semiconductor
Product StatusObsolete
Rds On (Max) @ Id, Vgs3mOhm @ 23A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 1mA

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