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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current14 ~ 27 A
On-resistance9 mΩMax · 14A
Gate threshold voltage3 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C14A (Ta), 27A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.5W (Ta), 37.8W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / Case8-PowerWDFN
Supplier Device Package8-MLP (5x6), Power56
Other
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1680 pF @ 15 V
MfrFairchild Semiconductor
Product StatusObsolete
Rds On (Max) @ Id, Vgs9mOhm @ 14A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

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