onsemiUnited States
MOSFET P-CH 60V 1.25A SUPERSOT3
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage60 V
Continuous drain current1.25 A
On-resistance170 mΩMax · 1.25A
Gate threshold voltage3 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.25A (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 500mW (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Other | |
| Base Product Number | FDN561 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 13.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 30 V |
| Mfr | onsemi |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 1.25A, 10V |
| Series | PowerTrench® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
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