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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage150 V
Continuous drain current1.6 A
On-resistance261 mΩMax · 1.6A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C1.6A (Ta)
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Power Dissipation (Max)1.5W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3
Other
Base Product NumberFDN862
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds225 pF @ 75 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs261mOhm @ 1.6A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

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