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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage150 V
Continuous drain current22 A
On-resistance80 mΩMax · 11A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C22A (Ta)
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Power Dissipation (Max)93W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
Other
Base Product NumberFDP25
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1911 pF @ 75 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs80mOhm @ 11A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

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