FDP6030L

停产单 FET,MOSFETTO-220-3

MOSFET N-CH 30V 48A TO220-3

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沟道N 沟道
耐压30 V
连续漏极电流48 A
导通电阻13 mΩ

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技术参数

沟道N 沟道
耐压30 V
连续漏极电流48 A
导通电阻13 mΩ最大 · 26A
阈值电压3 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C48A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)52W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
其他
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1250 pF @ 15 V
MfrFairchild Semiconductor
Product StatusObsolete
Rds On (Max) @ Id, Vgs13mOhm @ 26A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

技术资料

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