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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage40 V
Continuous drain current23 ~ 80 A
On-resistance2.7 mΩMax · 80A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C23A (Ta), 80A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)300W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
Other
Base Product NumberFDP84
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds15000 pF @ 25 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs2.7mOhm @ 80A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

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