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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage40 V
Continuous drain current12 ~ 50 A
On-resistance8.7 mΩMax · 14A
Gate threshold voltage3 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C12A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2W (Ta), 60W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
Other
Base Product NumberFDP8447
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 20 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs8.7mOhm @ 14A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

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