onsemi美国

FDPF10N50UT

停产单 FET,MOSFETTO-220F-3

MOSFET N-CH 500V 8A TO220F

沟道N 沟道
耐压500 V
连续漏极电流8 A
导通电阻1.05 Ω

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技术参数

沟道N 沟道
耐压500 V
连续漏极电流8 A
导通电阻1.05 Ω最大 · 4A
阈值电压5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)42W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220F-3
其他
Base Product NumberFDPF10
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1130 pF @ 25 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs1.05Ohm @ 4A, 10V
SeriesUniFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

技术资料