onsemiUnited States
MOSFET P-CH 12V 11A SUPERSOT8
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage12 V
Continuous drain current11 A
On-resistance9 mΩMax · 11A
Gate threshold voltage1.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Power Dissipation (Max) | 1.8W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-LSOP (0.130", 3.30mm Width) |
| Supplier Device Package | SuperSOT™-8 |
| Other | |
| Base Product Number | FDR84 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5350 pF @ 6 V |
| Mfr | onsemi |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 11A, 4.5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |