FDS6680A
onsemi美国

FDS6680A

在产单 FET,MOSFET8-SOIC

MOSFET N-CH 30V 12.5A 8SOIC

沟道N 沟道
耐压30 V
连续漏极电流12.5 A
导通电阻9.5 mΩ

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技术参数

沟道N 沟道
耐压30 V
连续漏极电流12.5 A
导通电阻9.5 mΩ最大 · 12.5A
阈值电压3 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C12.5A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.5W (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
其他
Base Product NumberFDS6680
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1620 pF @ 15 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs9.5mOhm @ 12.5A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

器件图片

技术资料