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技术参数

电源
Current - Continuous Drain (Id) @ 25°C4.3A, 6.8A
Drain to Source Voltage (Vdss)30V, 12V
Power - Max900mW
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
其他
Base Product NumberFDS69
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs7.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds530pF @ 15V
MfrFairchild Semiconductor
Product StatusObsolete
Rds On (Max) @ Id, Vgs55mOhm @ 4.3A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

器件图片

技术资料