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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current15 A
On-resistance7.5 mΩMax · 15A
Gate threshold voltage2 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C15A (Ta)
Drain to Source Voltage (Vdss)30 V
Power Dissipation (Max)-
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
Other
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds3451 pF @ 15 V
MfrFairchild Semiconductor
Product StatusObsolete
Rds On (Max) @ Id, Vgs7.5mOhm @ 15A, 4.5V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA

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