All alternatives

View full report

Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Drain to Source Voltage (Vdss)30V
Power - Max900mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
Other
Base Product NumberFDS89
Configuration2 N-Channel (Dual)
FET Feature-
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds650pF @ 15V
MfrFairchild Semiconductor
Product StatusActive
Rds On (Max) @ Id, Vgs28mOhm @ 6A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

Documents