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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C7.5A (Ta)
Drain to Source Voltage (Vdss)30V
Power - Max1.6W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
Other
Base Product NumberFDS89
Configuration2 N-Channel (Dual)
FET Feature-
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1270pF @ 15V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs18mOhm @ 7.5A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

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