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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C5A
Drain to Source Voltage (Vdss)20V
Power - Max900mW
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageBulk
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
Other
Base Product NumberFDS99
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds825pF @ 10V
MfrFairchild Semiconductor
Product StatusObsolete
Rds On (Max) @ Id, Vgs55mOhm @ 3.2A, 4.5V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2V @ 250µA

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