FDT86256
onsemi美国

FDT86256

末批订购单 FET,MOSFETSOT-223-4

MOSFET N-CH 150V 1.2A/3A SOT223

沟道N 沟道
耐压150 V
连续漏极电流1.2 ~ 3 A
导通电阻845 mΩ

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技术参数

沟道N 沟道
耐压150 V
连续漏极电流1.2 ~ 3 A
导通电阻845 mΩ最大 · 1.2A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C1.2A (Ta), 3A (Tc)
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Power Dissipation (Max)2.3W (Ta), 10W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223-4
其他
Base Product NumberFDT86
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds73 pF @ 75 V
Mfronsemi
Product StatusLast Time Buy
Rds On (Max) @ Id, Vgs845mOhm @ 1.2A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

器件图片

技术资料