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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage20 V
Continuous drain current14.7 ~ 50 A
On-resistance9 mΩMax · 16.2A
Gate threshold voltage1.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C14.7A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Power Dissipation (Max)3.8W (Ta), 44W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-PAK
Other
Base Product NumberFDU37
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1882 pF @ 10 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs9mOhm @ 16.2A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.5V @ 250µA

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