onsemi美国

FDZ197PZ

停产单 FET,MOSFET6-WLCSP

MOSFET P-CH 20V 3.8A 6WLCSP

沟道P 沟道
耐压20 V
连续漏极电流3.8 A
导通电阻64 mΩ

全部替代型号

查看完整报告

技术参数

沟道P 沟道
耐压20 V
连续漏极电流3.8 A
导通电阻64 mΩ最大 · 2A
阈值电压1 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C3.8A (Ta)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Power Dissipation (Max)1.9W (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case6-UFBGA, WLCSP
Supplier Device Package6-WLCSP (1x1.5)
其他
Base Product NumberFDZ19
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1570 pF @ 10 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs64mOhm @ 2A, 4.5V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

技术资料