FES10D
onsemi美国

FES10D

不推荐用于新设计单二极管TO-277-3

DIODE GEN PURP 200V 10A TO277-3

反向耐压200 V
平均整流电流10 A
正向压降950 mV
类型标准

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技术参数

反向耐压200 V
平均整流电流10 A
正向压降950 mV最大 · 10 A
类型标准Standard Recovery >500ns,> 200mA (Io)
电源
Current - Average Rectified (Io)10A
Current - Reverse Leakage @ Vr5 µA @ 200 V
Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If950 mV @ 10 A
环境与封装
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction-55°C ~ 175°C
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-277, 3-PowerDFN
QualificationAEC-Q101
Supplier Device PackageTO-277-3
其他
Base Product NumberFES10
Capacitance @ Vr, F140pF @ 4V, 1MHz
Mfronsemi
Product StatusNot For New Designs
Reverse Recovery Time (trr)30 ns
Series-
SpeedStandard Recovery >500ns, > 200mA (Io)
TechnologyStandard

器件图片

技术资料