onsemiUnited States

FES16DTR

ObsoleteSingle DiodesTO-220-2

DIODE GEN PURP 200V 16A TO220-2

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Technical parameters

Key specs

Reverse voltage200 V
Average rectified current16 A
Forward voltage950 mVMax · 8 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
Power
Current - Average Rectified (Io)16A
Current - Reverse Leakage @ Vr10 µA @ 200 V
Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If950 mV @ 8 A
Environment and package
Mounting TypeThrough Hole
Operating Temperature - Junction-65°C ~ 150°C
PackageTube
Package / CaseTO-220-2
Supplier Device PackageTO-220-2
Other
Base Product NumberFES16
Capacitance @ Vr, F170pF @ 4V, 1MHz
Mfronsemi
Product StatusObsolete
Reverse Recovery Time (trr)35 ns
Series-
SpeedFast Recovery =< 500ns, > 200mA (Io)
TechnologyStandard

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