onsemiUnited States
DIODE GEN PURP 600V 4A TO220-2L
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View full reportTechnical parameters
Key specs
Reverse voltage600 V
Average rectified current4 A
Forward voltage2.6 VMax · 4 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 4A |
| Current - Reverse Leakage @ Vr | 100 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.6 V @ 4 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Package | Tube |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2L |
| Other | |
| Base Product Number | FFP04 |
| Capacitance @ Vr, F | - |
| Mfr | onsemi |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 25 ns |
| Series | Stealth™ |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |