onsemiUnited States
DIODE SIL CARBIDE 650V 11A 4PQFN
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View full reportTechnical parameters
Key specs
Reverse voltage650 V
Average rectified current11 A
Forward voltage1.75 VMax · 10 A
TypeSchottky
| Power | |
|---|---|
| Current - Average Rectified (Io) | 11A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 10 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 4-PowerTSFN |
| Supplier Device Package | 4-PQFN (8x8) |
| Other | |
| Base Product Number | FFSM1065 |
| Capacitance @ Vr, F | 575pF @ 1V, 100kHz |
| Mfr | onsemi |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | - |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |