FGA6530WDF
onsemi美国

FGA6530WDF

停产单 IGBT

IGBT 650V 60A 176W TO3PN

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技术参数

电源
Current - Collector (Ic) (Max)60 A
Current - Collector Pulsed (Icm)90 A
Power - Max176 W
Voltage - Collector Emitter Breakdown (Max)650 V
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3PN
其他
Base Product NumberFGA6530
Gate Charge37.4 nC
IGBT TypeTrench Field Stop
Input TypeStandard
Mfronsemi
Product StatusObsolete
Reverse Recovery Time (trr)81 ns
Series-
Switching Energy960µJ (on), 162µJ (off)
Td (on/off) @ 25°C12ns/42.4ns
Test Condition400V, 30A, 6Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 30A

器件图片

技术资料