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Technical parameters

Key specs

TypePNP
Collector-emitter voltage35 V
Collector current2 AMax
DC current gain1001.5A
Power1.56 WMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)2 A
Power - Max1.56 W
Voltage - Collector Emitter Breakdown (Max)35 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1.5A, 1.5V
Frequency - Transition-
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageTape & Reel (TR)
Package / Case6-WDFN Exposed Pad
Supplier Device Package6-MicroFET (2x2)
Other
Base Product NumberFJMA79
Mfronsemi
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic450mV @ 50mA, 2A

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