All alternatives

View full report

Technical parameters

Key specs

TypeNPN
Collector-emitter voltage800 V
Collector current3 AMax
DC current gain15200mA
Power50 WMax
Power
Current - Collector Cutoff (Max)10µA (ICBO)
Current - Collector (Ic) (Max)3 A
Power - Max50 W
Voltage - Collector Emitter Breakdown (Max)800 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 200mA, 5V
Frequency - Transition15MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
Other
Base Product NumberFJP5027
Mfronsemi
Product StatusLast Time Buy
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic2V @ 300mA, 1.5A

Documents

No documents are linked to this part yet.