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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage33 V
Continuous drain current14 A
On-resistance4.6 mΩMax · 7A
Gate threshold voltage3 VMax · 2.2mA
Power
Current - Continuous Drain (Id) @ 25°C14A (Ta)
Drain to Source Voltage (Vdss)33 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)1W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Supplier Device PackageWMini8-F1
Other
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 10 V
MfrPanasonic Electronic Components
Product StatusObsolete
Rds On (Max) @ Id, Vgs4.6mOhm @ 7A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id3V @ 2.2mA

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