MOSFET 60V/60A/0.011
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current60 A
On-resistance7.35 mΩMax · 10A
Gate threshold voltage2.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 60W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Package | Tube |
| Package / Case | - |
| Supplier Device Package | TO-220S |
| Other | |
| Base Product Number | FKV660 |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 10 V |
| Mfr | Sanken Electric USA Inc. |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 7.35mOhm @ 10A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |