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Technical parameters

Key specs

TypePNP
Collector-emitter voltage80 V
Collector current500 mAMax
DC current gain100100mA
Power700 mWMax
Power
Current - Collector Cutoff (Max)100nA
Current - Collector (Ic) (Max)500 mA
Power - Max700 mW
Voltage - Collector Emitter Breakdown (Max)80 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 1V
Frequency - Transition50MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageSuperSOT™-6
Other
Mfronsemi
Product StatusActive
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA

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