IXYSUnited States
MOSFET 2N-CH 150V 65A I4-PAC
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 65A |
| Drain to Source Voltage (Vdss) | 150V |
| Power - Max | - |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | i4-Pac™-5 |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| Other | |
| Base Product Number | FMM65 |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Gate Charge (Qg) (Max) @ Vgs | 230nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Mfr | IXYS |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 50A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |