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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage100 V
Collector current1 AMax
DC current gain100250mA
Power500 mWMax
Power
Current - Collector Cutoff (Max)100nA
Current - Collector (Ic) (Max)1 A
Power - Max500 mW
Voltage - Collector Emitter Breakdown (Max)100 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 250mA, 10V
Frequency - Transition150MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23 (Type DN)
Other
MfrDiodes Incorporated
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A

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