Fairchild SemiconductorUnited States
INSULATED GATE BIPOLAR TRANSISTO
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 250 µA |
| Current - Collector (Ic) (Max) | 40 A |
| Power - Max | 156 W |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package | Bulk |
| Package / Case | Module |
| Supplier Device Package | F2 |
| Other | |
| Configuration | 3 Independent |
| IGBT Type | Field Stop |
| Input | Standard |
| Mfr | Fairchild Semiconductor |
| NTC Thermistor | Yes |
| Product Status | Active |
| Series | - |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 40A |
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