onsemiUnited States
MOSFET P-CH 100V 16.6A TO3PF
All alternatives
View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage100 V
Continuous drain current16.6 A
On-resistance125 mΩMax · 8.3A
Gate threshold voltage4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16.6A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 70W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Supplier Device Package | TO-3PF |
| Other | |
| Base Product Number | FQAF2 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
| Mfr | onsemi |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 8.3A, 10V |
| Series | QFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
Documents
No documents are linked to this part yet.