onsemi美国

FQB34N20LTM

在产单 FET,MOSFETTO-263

MOSFET N-CH 200V 31A D2PAK

沟道N 沟道
耐压200 V
连续漏极电流31 A
导通电阻75 mΩ

全部替代型号

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技术参数

沟道N 沟道
耐压200 V
连续漏极电流31 A
导通电阻75 mΩ最大 · 15.5A
阈值电压2 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Power Dissipation (Max)3.13W (Ta), 180W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263 (D2PAK)
其他
Base Product NumberFQB34N20
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs72 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds3900 pF @ 25 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs75mOhm @ 15.5A, 10V
SeriesQFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

技术资料