MOSFET N-CH 700V 6.2A D2PAK
沟道N 沟道
耐压700 V
连续漏极电流6.2 A
导通电阻1.5 Ω
全部替代型号
查看完整报告技术参数
沟道N 沟道
耐压700 V
连续漏极电流6.2 A
导通电阻1.5 Ω最大 · 3.1A
阈值电压5 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Tc) |
| Drain to Source Voltage (Vdss) | 700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 3.13W (Ta), 142W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK (TO-263) |
| 其他 | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
| Mfr | Fairchild Semiconductor |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 3.1A, 10V |
| Series | QFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |