FQB9P25TM
onsemi美国

FQB9P25TM

停产单 FET,MOSFETD²PAK

MOSFET P-CH 250V 9.4A D2PAK

沟道P 沟道
耐压250 V
连续漏极电流9.4 A
导通电阻620 mΩ

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技术参数

沟道P 沟道
耐压250 V
连续漏极电流9.4 A
导通电阻620 mΩ最大 · 4.7A
阈值电压5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C9.4A (Tc)
Drain to Source Voltage (Vdss)250 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)3.13W (Ta), 120W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK (TO-263)
其他
Base Product NumberFQB9
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1180 pF @ 25 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs620mOhm @ 4.7A, 10V
SeriesQFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

器件图片

技术资料